High dielectric constant material deposition to achieve high capacitance

US6207584A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Infineon Technologies North America Corp. · US

Inventors

• Hua Shen · Beacon, US
• David E. Kotecki · Hopewell Junction, US
• Robert Benjamin Laibowitz · Peekskill, US
• Katherine L. Saenger · Ossining, US
• Satish D. Athavale · Fishkill, US
• Jenny Lian · Oshima, JP
• Martin Gutsche · Dorfen, DE
• Yun-Yu Wang · Poughquag, US
• Thomas Shaw · Peekskill, US

Key dates

• Filing date: Jan 5, 2000
• Grant date: Mar 27, 2001
• Expiry date: Jan 5, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.