Method of performing titanium/titanium nitride integration

US6221174A · kind A · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Fufa Chen · Cupertino, US
• Yin Lin · Mountain View, US
• Jianhua Hu · Palo Alto, US
• Frederick Wu · Cupertino, US
• Ming Xi · Palo Alto, US
• Li Wu · Fremont, US

Key dates

• Filing date: Feb 11, 1999
• Grant date: Apr 24, 2001
• Expiry date: Feb 11, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28568
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi.sub.4) and ammonia (NH.sub.3). A Ti film is subject to a treatment of NH.sub.3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl.sub.4 /NH.sub.3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 .ANG..