Plasma treatment of titanium nitride formed by chemical vapor deposition
US6270859A · kind A · utility
26Cited by
10References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 27, 1998 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Mar 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.