Integrated process for copper via filling

US6274008A · kind A · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Praburam Gopalraja · San Jose, US
• Jianming Fu · San Jose, US
• Fusen Chen · Dallas, US
• Girish Dixit · San Jose, US
• Zheng Xu · Hangzhou City, CN
• Sankaram Athreya · Sunnyvale, US
• Wei Wang · Shanghai, CN
• Ashok Sinha · Palo Alto, US

Key dates

• Filing date: Oct 2, 2000
• Grant date: Aug 14, 2001
• Expiry date: Oct 2, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2221/1089
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.