Semiconductor integrated circuit device and method for making the same
US6300237A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 8, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Feb 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.