Method and device for compensating wafer bias in a plasma processing chamber
US6361645B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1998 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Oct 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.