Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding
US6378759B1 · kind B1 · utility
25Cited by
22References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Jul 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.