Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding
US6417088B1 · kind B1 · utility
21Cited by
12References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 24, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Aug 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conductive cap layer over a metal bonding pad comprises the following steps. A semiconductor structure is provided having an exposed, recessed metal bonding pad within a layer opening. The layer has an upper surface. The exposed metal bonding pad is treated with a solution containing soluble metal ions to form a conductive cap over the metal bonding pad. The conductive cap layer is comprised of the solution metal and has a predetermined thickness. An external bonding element may then be bonded to the conductive cap, forming an electrical connection with the metal bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.