Method for forming a porous dielectric material layer in a semiconductor device and device formed
US6451712B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus achieving a dielectric material that has significantly improved dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.