Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides

US6500489B1 · kind B1 · utility

Assignees

• ADVANCED TECHNOLOGY & MATERIALS CO., LTD. · US
• Infineon Technologies AG · DE

Inventors

• Frank Hintermaier · Hersbruck, DE
• Peter C. Van Buskirk · Newtown, US
• Jeffrey F. Roeder · Brookfield, US
• Bryan C. Hendrix · Danbury, US
• Thomas H. Baum · New Fairfield, US
• Debra A. Desrochers · Brookfield, US

Key dates

• Filing date: Dec 9, 1998
• Grant date: Dec 31, 2002
• Expiry date: Dec 9, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.