Sidewall treatment for low dielectric constant (low K) materials by ion implantation

US6514844B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Jeremy I. Martin · Austin, US
• Eric M. Apelgren · Austin, US
• Christian Zistl · Dresden, DE
• Paul R. Besser · Sunnyvale, US
• Srikantewara Dakshina-Murthy · Austin, US
• Jonathan B. Smith · Fremont, US
• Nick Kepler · Saratoga, US
• Fred Cheung · San Jose, US

Key dates

• Filing date: Apr 23, 2001
• Grant date: Feb 4, 2003
• Expiry date: Apr 23, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided, the method comprising forming a first conductive structure, and forming a first dielectric layer above the first conductive structure. The method also comprises densifying a portion of the first dielectric layer above at least a portion of the first conductive structure, and forming a first opening in the densified portion of the first dielectric layer.