Method and apparatus for enhanced CMP using metals having reductive properties
US6561873B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2002 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Mar 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.