Method for forming a bottom spin valve magnetoresistive sensor element
US6581272B1 · kind B1 · utility
12Cited by
23References
22Claims
0Family size
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Key dates
| Filing date | Jan 4, 2002 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Jan 4, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49046
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.