Memory wordline hard mask

US6617215B1 · kind B1 · utility

Assignees

• Advanced Micro Devices, Inc. · US
• FUJITSU LIMITED · JP

Inventors

• Arvind Halliyal · Cupertino, US
• Tazrien Kamal · Atlanta, US
• Minh Van Ngo · Fremont, US
• Mark T. Ramsbey · Sunnyvale, US
• Jeffrey A. Shields · Sunnyvale, US
• Jean Y. Yang · Sunnyvale, US
• Emmanuil Lingunis · San Jose, US
• Angela T. Hui · Fremont, US
• Jusuke Ogura · Cupertino, US

Key dates

• Filing date: Mar 27, 2002
• Grant date: Sep 9, 2003
• Expiry date: Mar 27, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0332
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A manufacturing method for a MirrorBit® Flash memory includes providing a semiconductor substrate and depositing a charge-trapping dielectric material. First and second bitlines are implanted and a wordline material is deposited. A hard mask material is deposited over the wordline material. The hard mask material is of a material having the characteristic of being deposited rather than grown. A photoresist material is deposited over the wordline material and is patterned to form a patterned hard mask. The patterned photoresist material is removed. The wordline material is processed using the patterned hard mask to form a wordline. The patterned hard mask material is removed.