Optical monitoring in a two-step chemical mechanical polishing process
US6632124B2 · kind B2 · utility
9Cited by
18References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2003 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.