Ion exchange materials for chemical mechanical polishing
US6638143B2 · kind B2 · utility
23Cited by
43References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jan 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67046
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.