Method and apparatus for determination and control of plasma state
US6713969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2003 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jan 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/0062
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.