Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US6737318B2 · kind B2 · utility
105Cited by
14References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2001 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.