Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning

US6773998B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Philip A. Fisher · Foster City, US
• Marina V. Plat · San Jose, US
• Chih-Yuh Yang · San Jose, US
• Christopher F. Lyons · Fremont, US
• Scott A. Bell · San Jose, US
• Douglas J. Bonser · Irving, US
• Lu You · Santa Clara, US
• Srikanteswara Dakshina-Murthy · Wappingers Falls, US

Key dates

• Filing date: May 20, 2003
• Grant date: Aug 10, 2004
• Expiry date: May 20, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32137
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for an integrated circuit includes the use of an amorphous carbon ARC mask. A layer of amorphous carbon material is deposited above a layer of conductive material, and a layer of anti-reflective coating (ARC) material is deposited over the layer of amorphous carbon material. The layer of amorphous carbon material and the layer of ARC material are etched to form a mask comprising an ARC material portion and an amorphous carbon portion. A feature may then be formed in the layer of conductive material by etching the layer of conductive material in accordance with the mask.