UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
US6774432B1 · kind B1 · utility
15Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2003 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Feb 14, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device, including a SONOS flash memory cell; and at least one UV-protective layer, in which the UV-protective layer comprises a substantially UV-opaque material, is provided. In one embodiment, the device includes a substantially UV-opaque contact cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.