Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
US6825134B2 · kind B2 · utility
560Cited by
85References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.