Semiconductor device and process for producing the same
US6881646B2 · kind B2 · utility
7Cited by
18References
21Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 21, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.