Thermally matched support ring for substrate processing chamber
US6888104B1 · kind B1 · utility
18Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2004 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Feb 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68757
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.