Reduced cap layer erosion for borderless contacts

US6890815B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Johnathan E. Faltermeier · San Jose, US
• Jeremy K. Stephens · New Windsor, US
• David M. Dobuzinsky · New Windsor, US
• Larry Clevenger · Lagrangeville, US
• Munir D. Naeem · Poughkeepsie, US
• Chienfan Yu · Highland Mills, US
• Larry A. Nesbit · Williston, US
• Rama Divakaruni · Ossining, US
• Michael Maldei · Durham, US

Key dates

• Filing date: Sep 4, 2003
• Grant date: May 10, 2005
• Expiry date: Sep 4, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/488
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.