Trench isolation employing a doped oxide trench fill
US6890833B2 · kind B2 · utility
15Cited by
9References
15Claims
0Family size
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Inventors
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench isolation structure is formed in a substrate. One or more openings are formed in a surface of the substrate, and a liner layer is deposited at least along a bottom and sidewalls of the openings. A layer of doped oxide material is deposited at least in the openings, and the substrate is annealed to reflow the layer of doped oxide material. Only a portion near the surface of the substrate is removed from the layer of doped oxide material in the opening. A cap layer is deposited atop a remaining portion of the layer of doped oxide material in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.