Semiconductor trench structure

US6919255B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Matthias Goldbach · Dresden, DE
• Thomas Hecht · Dresden, DE
• Lars Heineck · Dresden, DE
• Stephan Kudelka · Radeberg, DE
• Jorn Lutzen · Dresden, DE
• Dirk Manger · Dresden, DE
• Andreas Orth · Friedrichsdorf, DE

Key dates

• Filing date: Jul 30, 2003
• Grant date: Jul 19, 2005
• Expiry date: Jul 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/665

Abstract

A method for fabricating a semiconductor trench structure includes forming a trench in a semiconductor substrate and filling it with a filler. A first thermal process having a first maximum temperature cures the filler. Removing the filler from an upper region of the trench as far as a boundary surface defines a collar region. In a second thermal process having a second maximum temperature that is not significantly higher than the first maximum temperature, a liner is deposited on the collar region and the boundary surface. The liner is removed from the boundary surface, thereby exposing the filler. The filler is then removed from a lower region of the trench.