Method and apparatus for gas temperature control in a semiconductor processing system
US6955211B2 · kind B2 · utility
54Cited by
76References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2002 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Aug 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67282
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas temperature control apparatus for semiconductor processing includes a gas delivery line coupled between a processing chamber and a gas source. An enclosure substantially encloses the gas delivery line and is adapted to flow a heat transfer fluid away from the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.