Semiconductor device having an organic anti-reflective coating (ARC) and method therefor

US6972255B2 · kind B2 · utility

Assignees

• Freeescale Semiconductor, Inc. · US
• Advanced Micro Devices, Inc. · US

Inventors

• Douglas M. Reber · Austin, US
• Mark D. Hall · Austin, US
• Kurt H. Junker · Austin, US
• Kyle Patterson · Meylan, FR
• Tab A. Stephens · Kyle, US
• Edward K. Theiss · Cedar Park, US
• Srikanteswara Dakshiina-Murthy · Wappingers Falls, US
• Marilyn I. Wright · Austin, US

Key dates

• Filing date: Jul 28, 2003
• Grant date: Dec 6, 2005
• Expiry date: Aug 1, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/952
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.