Fabrication method for semiconductor integrated devices
US6992022B2 · kind B2 · utility
10Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 9, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | May 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming the lower and upper electrodes of a high dielectric constant capacitor in a semiconductor device from an organoruthenium compound by chemical vapor deposition. This chemical vapor deposition technique employs an organoruthenium compound, an oxidizing gas, and a gas (such as argon) which is hardly adsorbed to the ruthenium surface or a gas (such as ethylene) which is readily adsorbed to the ruthenium surface. This process efficiently forms a ruthenium film with good conformality in a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.