ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices
US7033957B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Mar 14, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for reducing charge leakage in a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on the semiconductor substrate to form an oxide/silicon interface having a first oxygen content adjacent the oxide/silicon interface; treating the bottom oxide layer to increase the first oxygen content to a second oxygen content adjacent the oxide/silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer. In another embodiment, process for reducing charge leakage in a SONOS flash memory device, including forming a bottom oxide layer of an ONO structure on a surface of the semiconductor substrate having an oxide/silicon interface with a super-stoichiometric oxygen content adjacent the oxide/silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.