Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 · kind B2 · utility
6Cited by
6References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 12, 2004 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Jul 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31708
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.