Fabricating method of semiconductor integrated circuits
US7259058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Dec 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.