Process of manufacturing a seed/AFM combination for a CPP GMR device
US7331100B2 · kind B2 · utility
32Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2004 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Oct 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabling a reduced shield-to-shield spacing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.