Semiconductor integrated circuit device and a method of manufacturing the same
US7397104B2 · kind B2 · utility
0Cited by
15References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2004 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device is provided which includes an active region, a shallow groove isolation adjacent to the active region, and a semiconductor element formed in the active region and having a gate. The sum of a width of the active region and a width of the shallow groove isolation constitutes a minimum pitch in the direction of a gate width of the gate, and the width of the active region is set larger than one-half of the minimum pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.