Liquid precursors for the CVD deposition of amorphous carbon films
US7407893B2 · kind B2 · utility
21Cited by
63References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Feb 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.