Minimizing degradation of SiC bipolar semiconductor devices
US7427326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2006 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Nov 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.