Capacitor constructions and methods of forming

US7440255B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Brent A. McClure · Boise, US
• Casey Kurth · Eagle, US
• Shenlin Chen · Boise, US
• Debra K. Gould · Nampa, US
• Lyle Breiner · Meridian, US
• Er-Xuan Ping · Boise, US
• Fred Fishburn · Boise, US
• Hongmei Wang · Boise, US

Key dates

• Filing date: Jul 21, 2003
• Grant date: Oct 21, 2008
• Expiry date: Jul 21, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.