Method for fabricating semiconductor components with thinned substrate, circuit side contacts, conductive vias and backside contacts
US7459393B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2006 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Nov 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.