Patent · US Active

Method to improve time dependent dielectric breakdown

US7473636B2 · kind B2 · utility

0Cited by
23References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 12, 2006
Grant dateJan 6, 2009
Priority date
Expiry dateJan 24, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.