Method to improve time dependent dielectric breakdown
US7473636B2 · kind B2 · utility
0Cited by
23References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jan 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.