Method of fabrication of phase-change memory
US7521372B2 · kind B2 · utility
13Cited by
3References
16Claims
0Family size
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Key dates
| Filing date | Dec 29, 2006 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Jun 21, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularly, the transistor can be a field effect transistor or a bipolar junction transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.