Semiconductor devices with copper interconnects and composite silicon nitride capping layers
US7534732B1 · kind B1 · utility
6Cited by
9References
7Claims
0Family size
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Key dates
| Filing date | Feb 17, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Dec 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon nitride layer having a relatively high concentration of Si—H bonds on the upper surface of a layer of Cu for improved adhesion and reduced electromigration, and depositing a second relatively thick silicon nitride layer having a relatively low concentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.