Phase change memory device and method for fabricating the same
US7566895B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | May 24, 2007 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Sep 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device is provided. The phase change memory device includes a substrate comprising a stacked structure. The stacked structure comprises a plurality of insulating layers and conductive layers. Any two of the conductive layers are spaced apart by one of the conductive layers. A first electrode structure with a first sidewall and a second sidewall is formed on the stacked structure. A plurality of heating electrodes is placed on the conductive layers and adjacent to the first sidewall and the second sidewall of the first electrode structure. A pair of phase change material spacers is placed on the first sidewall and the second sidewall of the first electrode structure. The phase change material sidewalls cover the plurality of heating electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.