Shallow source MOSFET
US7667264B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2004 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Sep 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A semiconductor device comprises a drain, a body in contact with the drain, the body having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a trench extending through the source and the body to the drain, and a gate disposed in the trench, having a gate top surface that extends substantially above the body top surface. A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.