Phase change memory device and fabrication method thereof
US7678606B2 · kind B2 · utility
14Cited by
8References
12Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Sep 4, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Feb 4, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.