Phase-change memory element

US7679163B2 · kind B2 · utility

Assignees

• Industrial Technology Research Institute · TW
• POWERCHIP SEMICONDUCTOR CORP. · TW
• NANYA TECHNOLOGY CORPORATION · TW
• Promos Technologies, Inc. · TW
• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Frederick Chen · Hsinchu, TW
• Ming-Jinn Tsai · Hsinchu, TW

Key dates

• Filing date: May 14, 2007
• Grant date: Mar 16, 2010
• Expiry date: Mar 9, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the composite layer. A phase-change material occupies at least one portion of the via hole. The composite layer comprises alternating layers or a mixture of the dielectric material and the low thermal conductivity material.