Apparatus and method for plasma etching
US7713756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Oct 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.