Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US7732793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Sep 15, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.