Patent · US Active

Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques

US7745334B2 · kind B2 · utility

2Cited by

5References

17Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Patrick Press · Dresden, DE
Karla Romero · Dresden, DE
Martin Trentzsch · Dresden, DE
Karsten Wieczorek · Dresden, DE
Thomas Feudel · Radebeul, DE
Markus Lenski · Dresden, DE
Rolf Stephan · Dresden, DE

Key dates

Filing date	Apr 18, 2007
Grant date	Jun 29, 2010
Priority date	—
Expiry date	Nov 9, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/015
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By performing sophisticated anneal techniques, such as laser anneal, flash anneal and the like, for a metal silicide formation, such as nickel silicide, the risk of nickel silicide defects in sensitive device regions, such as SRAM pass gates, may be significantly reduced. Also, the activation of dopants may be performed in a highly localized manner, so that undue damage of gate insulation layers may be avoided when activating and re-crystallizing drain and source regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.