Lateral semiconductor component with a drift zone having at least one field electrode

US7777278B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Armin Willmeroth · Friedberg, DE
• Markus Schmitt · Neubiberg, DE
• Carolin Tolksdorf · Ebersberg, DE
• Gerald Deboy · Klagenfurt, AT
• Ralf Henninger · Birkenfeld, DE
• Uwe Wahl · Munich, DE

Key dates

• Filing date: Jan 25, 2008
• Grant date: Aug 17, 2010
• Expiry date: Jul 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.