Electronic devices including a semiconductor layer

US7821067B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Voon-Yew Thean · Fishkill, US
• Brian J. Goolsby · Austin, US
• Linda B. McCormick · Dripping Springs, US
• Bich-Yen Nguyen · Austin, US
• Colita M. Parker · Austin, US
• Mariam Sadaka · Austin, US
• Victor H. Vartanian · Dripping Springs, US
• Ted R. White · Austin, US
• Melissa O. Zavala · Pflugerville, US

Key dates

• Filing date: Aug 10, 2007
• Grant date: Oct 26, 2010
• Expiry date: Jun 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the electronic device may be formed by forming an oxidation mask over the first semiconductor portion. A second semiconductor layer can be formed over the second semiconductor portion of the first semiconductor layer and have a different composition compared to the first semiconductor layer. An oxidation can be performed, and a concentration of a semiconductor element (e.g., germanium) within the second portion of the first semiconductor layer can be increased. In another embodiment, a selective condensation may be performed, and a field isolation region can be formed between the first and second portions of the first semiconductor layer.